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  jiangsu changjiang electronics technology co., ltd sot-323 plastic-encapsulate diodes BAP64-04W,05w,06w pin diode feature  high voltage ,current controlled  rf resistor for rf attenuators and switches  low diode capacitance  low diode forward resistance  low series inductance  for applications up to 3 ghz application  rf attenuators and switches bap6 4 -04w bap64-05w bap64-06w maximum ratings (t a =25 unless otherwise specified) parameter symbol value unit continuous reverse v oltage v r 175 v continuous for w ard current i f 100 ma power dissipation p d 200 mw thermal resistance from junction to ambient r ja 625 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -323 www.cj-elec.com 1 c , sep,201 5 BAP64-04W bap64-05w ba p64-06w soli d dot = green molding compound device,if none, the normal device.
parameter symbol conditi ons min typ max unit forward volta ge v f i f =50ma 1.1 v i r1 v r1 =175v 10 re v e rs e curr ent i r2 v r2 =20v 1 a c d1 v r =0v, f=1mhz 0.52 c d2 v r =1v,f=1mhz 0.5 diode capacitance c d3 v r =20v,f=1mhz 0.35 pf r d1 i f =0.5ma, f=100mhz 40 r d2 i f =1ma, f=100mhz 20 r d3 i f =10ma, f=100mhz 3.8 diode forwar d resistance (note 1) r d4 i f =100ma, f=100mhz 1.35 charge carrier life time l when s w itched from i f =10ma to i r =6ma; r l =100;measured at i r =3ma 1.55 s 1.6 series inductance l s i f =10ma, f=100mhz BAP64-04W/06w bap64-05w 1.4 nh note: 1.guaranteed on aql basis: inspecti on lev el s4,aql 1.0. mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 c,sep,2015
0 25 50 75 100 125 150 0 50 100 150 200 250 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 0 35 70 105 140 175 0.1 1 10 100 1000 0 2 4 6 8 10 12 14 16 18 20 0.0 0.1 0.2 0.3 0.4 0.5 forward characteristics reverse characteristics power derating curve power dissipation p d (w) ambient temperature t a ( ) t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) t a =100 t a =25 reverse current i r (na) reverse voltage v r (v) t a =25 f=1mhz capacitance characteristics per diode reverse voltage v r (v) junction capacitance c j (pf) typical characteristics www.cj-elec.com 3 c,sep,2015
min max min ma x a 0 .900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ sot-323 package outline dimensions sot -323 suggested pad layout www.cj-elec.com 4 c,sep,2015
sot -323 tape and reel www.cj-elec.com 5 c,sep,2015


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